Tae Ho Lee, Hong-Seok Kim,Woo Lee, Yong-Joo Doh
GIANT MAGNETORESISTIVE EFFECT IN NON-MAGNETIC SILICON
We report that a simple device, based on a lightly doped silicon substrate contacted with two indium contacts, shows a positive magnetoresistance over 1,000 per cent for magnetic fields between 0 and 1 T at low temperature of 3 K. Current-voltage characteristics exhibit a nonlinear behavior, which is highly sensitive to temperature and magnetic field. Since our device is based on a conventional silicon platform and is highly sensitive to low magnetic field, it could be used to develop new devices of silicon-based magnetoelectronics.