GIANT MAGNETORESISTIVE EFFECT IN NON-MAGNETIC SILICON |
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| Tae Ho Lee, Hong-Seok Kim,Woo Lee, Yong-Joo Doh |
- Abstract:
- We report that a simple device, based on a lightly doped silicon substrate contacted with two indium contacts, shows a positive magnetoresistance over 1,000 per cent for magnetic fields between 0 and 1 T at low temperature of 3 K. Current-voltage characteristics exhibit a nonlinear behavior, which is highly sensitive to temperature and magnetic field. Since our device is based on a conventional silicon platform and is highly sensitive to low magnetic field, it could be used to develop new devices of silicon-based magnetoelectronics.
- Keywords:
- magnetoresistance, silicon
- Download:
- IMEKO-WC-2012-TC4-P17.pdf
- DOI:
- -
- Event details
- Event name:
- XX IMEKO World Congress
- Title:
Metrology for Green Growth
- Place:
- Busan, REPUBLIC of KOREA
- Time:
- 09 September 2012 - 12 September 2012