DETERMINATION OF ADSORTION LAYERS ON SILICON SORPTION ARTIFACTS USING MASS COMPARISON |
|---|
| Unurbileg Darmaa, Jin Wan Chung, Sungjun Lee, Seung Nam Park |
- Abstract:
- The adsorption layers on the surface of silicon artifact have been determined experimentally as a function of relative air humidity in the range of 0.07 < h < 0.73 using gravimetric method. For the purpose of this work 1 kg silicon sorption artifacts were fabricated, which have same surface finish, material properties but with very different surface area of 507.8 cm2. In this experiment ultra precision mass comparator and special humidity control unit were used. The adsorption isotherm of water vapor on the silicon surface with Rz < 26.6 nm measured and sorption behavior of silicon surface is being type II by BET classification, BET parameters µm = 0.017 µg/cm², cB = 9.3 were found. The coefficient of water vapor adsorption in moist air was δµ/δh = 65.3 ng cm-2 %-1 in the limited humidity range of 0.3 < h < 0.6.
- Keywords:
- silicon sorption artifacts, mass comparison, adsorption layer
- Download:
- IMEKO-WC-2012-TC3-O3.pdf
- DOI:
- -
- Event details
- Event name:
- XX IMEKO World Congress
- Title:
Metrology for Green Growth
- Place:
- Busan, REPUBLIC of KOREA
- Time:
- 09 September 2012 - 12 September 2012