A NEW METHOD OF MEASUREMENT OF THE THERMAL RESISTANCE OF THE SILICON P-N DIODES
Janusz Zarębski, Krzysztof Górecki
Abstract:
This paper deals with the problem of measuring the thermal resistance of silicon p-n diodes. The values of this parameter given in the catalogues rarely correspond to the real conditions of device cooling, e.g. the diode operating on the heat-sink. Therefore, the value of the thermal resistance has to be obtained from measurements. In the paper a new comfortable method of the measurement of the thermal resistance of silicon p-n diodes, based on measurements of their d.c. current-voltage characteristic and the estimation of the model parameter values with the use of PARTS-software, is presented. The results of measurements obtained by the new method are compared to the standard pulse method.
Download:
IMEKO-TC4-2004-002.pdf
DOI:
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Event details
IMEKO TC:
TC4
Event name:
TC4 Symposium 2004
Title:
XIII IMEKO TC4 International Symposium on Measurements for Research and Industrial Applications (together with IXth International Workshop on ADC Modeling and Testing, IWADC)
Place:
Athens, GREECE
Time:
29 September 2004 - 01 October 2004
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